Characterisation and analytical modelling of GaN HEMT‐based varactor diodes

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

HIGH Q InP-BASED VARACTOR DIODES

We report on high quality-factor Heterostructure Barrier Varactor making benefit of epitaxial stacking and planar integration, with a cut-off frequency in the far infrared region. To this aim, high doping concentrations in the depletion (2x10 17 cm) and contact (1x10 cm) InGaAs regions lattice matched to an InP substrate and an InAlAs/AlAs blocking barrier scheme were used. Planar integration o...

متن کامل

Modelling and Characterisation of a Broadband 85/170 GHz Schottky Varactor Frequency Doubler

In this thesis, a frequency doubler is designed to produce a broadband local oscillator signal (LO) around 200 GHz. A linear array of four Schottky varactors are incorporated into a GaAs flip-chip in a balanced anti-series configuration [1], so as to generate the second harmonic of the incoming signal. The varactor chip is soldered to a suspended microstrip quartz circuit, which constitutes the...

متن کامل

VARACTOR DIODES The Nuts and Bolts of Tuning Varactors

M any electronic systems must be tuned through the variation of reactance of one or more circuit elements. In these applications it is often desirable to perform this tuning under electronic rather than manual control. Tuning varactor diodes, which are pn junction devices that act as voltage controlled variable capacitors, can perform this function, and are used in a wide range of product appli...

متن کامل

Polarization-engineered GaN/InGaN/GaN tunnel diodes

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel–Kramers– Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN / In0.33Ga0.67N /n-GaN heterostructure tunnel diodes were grown using molecular ...

متن کامل

Planar Varactor and Mixer Diodes Fabricated Using InP-Based Materials

This paper reports on a planar integrated technology which, unlike previous approaches, utilizes InP-based materials and airbridge technology to reduce parasitics by avoiding the use of a bridge-supporting dielectric. Verticalheterojunction varactors (VHV) and mixers were grown by the in-house Metalorganic-Chemical Vapor Deposition (MOCVD) system on S.1. InP substrates. A novel process is prese...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Electronics Letters

سال: 2015

ISSN: 0013-5194,1350-911X

DOI: 10.1049/el.2015.2362